Investigating the Role of Hydrofluoric Acid Concentration in Tailoring the Morphology and Enhancing the Photonic Properties of Nanoporous Silicon Wafers

At This research used an electrochemical method to convert bulk silicon wafers into porous silicon (PS). The wafers, chosen with a (100) orientation and (8-3) Ω.cm resistivity, the time of etching was 25 min and the current density of etching 25 mA/cm². It was carried out   nanoscale surface morphology on the PS substrates by modify the hydrofluoric acid (HF) to ethanol ratio (1:3, 1:6, and 1:9). In the compositional aspect it was used (AFM) to show that higher hydrofluoric: ethanol concentricity augment the porosity and particles density of wafer surface. subsequently, the etching depth given changeful directions with changing HF concentration, and the nanodimensions were clearly showed within the porous silicon layers were they produced. The anatomy of Photo luminescence (PL) specified that the energy gap E.G. was widened with increasing the porosity of wafers and the density of particles, as seem by a shifting to the blue in the PL spectrum